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Emerging nanoscale silicon devices taking advantage of nanostructure physics.

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Bibliographic Details
Title: Emerging nanoscale silicon devices taking advantage of nanostructure physics.
Authors: Hiramoto, T., Saitoh, M., Tsutsui, G.
Source: IBM Journal of Research & Development; July/September 2006, Vol. 50 Issue 4/5, p411-418, 8p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501282481
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Emerging nanoscale silicon devices taking advantage of nanostructure physics.
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        Value: 10.1147/rd.504.0411
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 411
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      – TitleFull: Emerging nanoscale silicon devices taking advantage of nanostructure physics.
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            NameFull: Hiramoto, T.
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              Text: July/September 2006
              Type: published
              Y: 2006
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