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A study of vacancies and vacancy pair defects in 4H SiC grown by halide chemical vapor deposition.

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Title: A study of vacancies and vacancy pair defects in 4H SiC grown by halide chemical vapor deposition.
Authors: Zvanut, M. E., Ngetich, G., Chung, H. J.
Source: Journal of Materials Science: Materials in Electronics; Aug2008, Vol. 19 Issue 8/9, p678-681, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501312804
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: A study of vacancies and vacancy pair defects in 4H SiC grown by halide chemical vapor deposition.
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      – Type: doi
        Value: 10.1007/s10854-007-9378-2
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 678
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      – TitleFull: A study of vacancies and vacancy pair defects in 4H SiC grown by halide chemical vapor deposition.
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            NameFull: Zvanut, M. E.
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            NameFull: Ngetich, G.
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            NameFull: Chung, H. J.
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              M: 08
              Text: Aug2008
              Type: published
              Y: 2008
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              Value: 19
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              Value: 8/9
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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