A study of vacancies and vacancy pair defects in 4H SiC grown by halide chemical vapor deposition.
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| Title: | A study of vacancies and vacancy pair defects in 4H SiC grown by halide chemical vapor deposition. |
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| Authors: | Zvanut, M. E., Ngetich, G., Chung, H. J. |
| Source: | Journal of Materials Science: Materials in Electronics; Aug2008, Vol. 19 Issue 8/9, p678-681, 4p |
| Database: | Applied Science & Technology Source |
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