Zhai, B., Hanson, S., & Blaauw, D. (2008). A Variation-Tolerant Sub-200 mV 6-T Subthreshold SRAM. IEEE Journal of Solid-State Circuits, 43(10), 2338. https://doi.org/10.1109/JSSC.2008.2001903
Chicago Style (17th ed.) CitationZhai, Bo, Scott Hanson, and David Blaauw. "A Variation-Tolerant Sub-200 MV 6-T Subthreshold SRAM." IEEE Journal of Solid-State Circuits 43, no. 10 (2008): 2338. https://doi.org/10.1109/JSSC.2008.2001903.
MLA (9th ed.) CitationZhai, Bo, et al. "A Variation-Tolerant Sub-200 MV 6-T Subthreshold SRAM." IEEE Journal of Solid-State Circuits, vol. 43, no. 10, 2008, p. 2338, https://doi.org/10.1109/JSSC.2008.2001903.
Warning: These citations may not always be 100% accurate.