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Behavior of Si and C atoms in ion amorphized SiC.

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Bibliographic Details
Title: Behavior of Si and C atoms in ion amorphized SiC.
Authors: Jiang, W., Zhang, Y., Engelhard, M. H.
Source: Journal of Applied Physics; January 15 2007, Vol. 101 Issue 2, p023524-023524, 1p
Database: Applied Science & Technology Source
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