Tang, K., Huang, W., & Chow, T. P. (2009). GaN MOS Capacitors and FETs on Plasma-Etched GaN Surfaces. Journal of Electronic Materials, 38(4), 523. https://doi.org/10.1007/s11664-008-0617-y
Chicago Style (17th ed.) CitationTang, K., W. Huang, and T. Paul Chow. "GaN MOS Capacitors and FETs on Plasma-Etched GaN Surfaces." Journal of Electronic Materials 38, no. 4 (2009): 523. https://doi.org/10.1007/s11664-008-0617-y.
MLA (9th ed.) CitationTang, K., et al. "GaN MOS Capacitors and FETs on Plasma-Etched GaN Surfaces." Journal of Electronic Materials, vol. 38, no. 4, 2009, p. 523, https://doi.org/10.1007/s11664-008-0617-y.
Warning: These citations may not always be 100% accurate.