GaN MOS Capacitors and FETs on Plasma-Etched GaN Surfaces.
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| Title: | GaN MOS Capacitors and FETs on Plasma-Etched GaN Surfaces. |
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| Authors: | Tang, K., Huang, W., Chow, T. Paul |
| Source: | Journal of Electronic Materials; April 2009, Vol. 38 Issue 4, p523-528, 6p |
| Database: | Applied Science & Technology Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 501409923 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: GaN MOS Capacitors and FETs on Plasma-Etched GaN Surfaces. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Tang%2C+K%2E%22">Tang, K.</searchLink><br /><searchLink fieldCode="AU" term="%22Huang%2C+W%2E%22">Huang, W.</searchLink><br /><searchLink fieldCode="AU" term="%22Chow%2C+T%2E+Paul%22">Chow, T. Paul</searchLink> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; April 2009, Vol. 38 Issue 4, p523-528, 6p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501409923 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s11664-008-0617-y Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 6 StartPage: 523 Titles: – TitleFull: GaN MOS Capacitors and FETs on Plasma-Etched GaN Surfaces. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Tang, K. – PersonEntity: Name: NameFull: Huang, W. – PersonEntity: Name: NameFull: Chow, T. Paul IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 04 Text: April 2009 Type: published Y: 2009 Identifiers: – Type: issn-print Value: 03615235 Numbering: – Type: volume Value: 38 – Type: issue Value: 4 Titles: – TitleFull: Journal of Electronic Materials Type: main |
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