The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy.

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Title: The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy.
Authors: Bourlange, A., Payne, D. J., Palgrave, R. G.
Source: Journal of Applied Physics; July 1 2009, Vol. 106 Issue 1, p013703-013703, 1p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501452116
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy.
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  Data: <searchLink fieldCode="AU" term="%22Bourlange%2C+A%2E%22">Bourlange, A.</searchLink><br /><searchLink fieldCode="AU" term="%22Payne%2C+D%2E+J%2E%22">Payne, D. J.</searchLink><br /><searchLink fieldCode="AU" term="%22Palgrave%2C+R%2E+G%2E%22">Palgrave, R. G.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; July 1 2009, Vol. 106 Issue 1, p013703-013703, 1p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501452116
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      – Type: doi
        Value: 10.1063/1.3153966
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      – Code: eng
        Text: English
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        PageCount: 1
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    Titles:
      – TitleFull: The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy.
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            NameFull: Bourlange, A.
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            NameFull: Palgrave, R. G.
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              Text: July 1 2009
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              Y: 2009
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