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Selective Growth of CdTe on Si(211): First-Principle Calculations.

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Title: Selective Growth of CdTe on Si(211): First-Principle Calculations.
Authors: Huang, Y., Chen, X. S., Duan, H.
Source: Journal of Electronic Materials; August 2007, Vol. 36 Issue 8, p925-930, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501460166
AccessLevel: 2
PubType: Academic Journal
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  Data: Selective Growth of CdTe on Si(211): First-Principle Calculations.
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        Value: 10.1007/s11664-007-0134-4
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      – Code: eng
        Text: English
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      – TitleFull: Selective Growth of CdTe on Si(211): First-Principle Calculations.
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            NameFull: Huang, Y.
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              Text: August 2007
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              Y: 2007
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