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Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current.

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Title: Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current.
Authors: Guo, Peng-Fei, Yang, Li-Tao, Yang, Yue
Source: IEEE Electron Device Letters; September 2009, Vol. 30 Issue 9, p981-983, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501486880
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current.
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  Data: <searchLink fieldCode="AU" term="%22Guo%2C+Peng-Fei%22">Guo, Peng-Fei</searchLink><br /><searchLink fieldCode="AU" term="%22Yang%2C+Li-Tao%22">Yang, Li-Tao</searchLink><br /><searchLink fieldCode="AU" term="%22Yang%2C+Yue%22">Yang, Yue</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; September 2009, Vol. 30 Issue 9, p981-983, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501486880
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/LED.2009.2026296
    Languages:
      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 981
    Titles:
      – TitleFull: Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current.
        Type: main
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          Name:
            NameFull: Guo, Peng-Fei
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            NameFull: Yang, Li-Tao
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            NameFull: Yang, Yue
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            – D: 01
              M: 09
              Text: September 2009
              Type: published
              Y: 2009
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              Value: 30
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              Value: 9
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            – TitleFull: IEEE Electron Device Letters
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