Liang, X., Canal, R., & Wei, G. (2008). Replacing 6T SRAMs with 3T1D DRAMs in the L1 Data Cache to Combat Process Variability. IEEE Micro, 28(1), 60. https://doi.org/10.1109/MM.2008.12
Chicago Style (17th ed.) CitationLiang, Xiaoyao, Ramon Canal, and Gu-Yeon Wei. "Replacing 6T SRAMs with 3T1D DRAMs in the L1 Data Cache to Combat Process Variability." IEEE Micro 28, no. 1 (2008): 60. https://doi.org/10.1109/MM.2008.12.
MLA (9th ed.) CitationLiang, Xiaoyao, et al. "Replacing 6T SRAMs with 3T1D DRAMs in the L1 Data Cache to Combat Process Variability." IEEE Micro, vol. 28, no. 1, 2008, p. 60, https://doi.org/10.1109/MM.2008.12.
Warning: These citations may not always be 100% accurate.