Replacing 6T SRAMs with 3T1D DRAMs in the L1 Data Cache to Combat Process Variability.

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Bibliographic Details
Title: Replacing 6T SRAMs with 3T1D DRAMs in the L1 Data Cache to Combat Process Variability.
Authors: Liang, Xiaoyao, Canal, Ramon, Wei, Gu-Yeon
Source: IEEE Micro; January/February 2008, Vol. 28 Issue 1, p60-68, 9p
Database: Applied Science & Technology Source
Description
ISSN:02721732
DOI:10.1109/MM.2008.12