APA (7th ed.) Citation

Ahmed, S., Islam, S., & Mohammed, S. (2010). Electronic Structure of InN/GaN Quantum Dots: Multimillion-Atom Tight-Binding Simulations. IEEE Transactions on Electron Devices, 57(1), 164. https://doi.org/10.1109/TED.2009.2035531

Chicago Style (17th ed.) Citation

Ahmed, Shaikh, Sharnali Islam, and Shareef Mohammed. "Electronic Structure of InN/GaN Quantum Dots: Multimillion-Atom Tight-Binding Simulations." IEEE Transactions on Electron Devices 57, no. 1 (2010): 164. https://doi.org/10.1109/TED.2009.2035531.

MLA (9th ed.) Citation

Ahmed, Shaikh, et al. "Electronic Structure of InN/GaN Quantum Dots: Multimillion-Atom Tight-Binding Simulations." IEEE Transactions on Electron Devices, vol. 57, no. 1, 2010, p. 164, https://doi.org/10.1109/TED.2009.2035531.