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Electronic Structure of InN/GaN Quantum Dots: Multimillion-Atom Tight-Binding Simulations.

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Bibliographic Details
Title: Electronic Structure of InN/GaN Quantum Dots: Multimillion-Atom Tight-Binding Simulations.
Authors: Ahmed, Shaikh, Islam, Sharnali, Mohammed, Shareef
Source: IEEE Transactions on Electron Devices; January 2010, Vol. 57 Issue 1, p164-173, 10p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501550160
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Electronic Structure of InN/GaN Quantum Dots: Multimillion-Atom Tight-Binding Simulations.
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  Data: <searchLink fieldCode="AU" term="%22Ahmed%2C+Shaikh%22">Ahmed, Shaikh</searchLink><br /><searchLink fieldCode="AU" term="%22Islam%2C+Sharnali%22">Islam, Sharnali</searchLink><br /><searchLink fieldCode="AU" term="%22Mohammed%2C+Shareef%22">Mohammed, Shareef</searchLink>
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        Value: 10.1109/TED.2009.2035531
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      – Code: eng
        Text: English
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        PageCount: 10
        StartPage: 164
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      – TitleFull: Electronic Structure of InN/GaN Quantum Dots: Multimillion-Atom Tight-Binding Simulations.
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            NameFull: Ahmed, Shaikh
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            NameFull: Islam, Sharnali
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              Text: January 2010
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              Y: 2010
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