APA (7th ed.) Citation

Nojima, S., Kawamura, Y., & Wakita, K. (1988). Electric field effects in excitonic absorption for high-quality InGaAs/InAlAs multiple-quantum-well structures. Journal of Applied Physics, 64, 2795. https://doi.org/10.1063/1.341582

Chicago Style (17th ed.) Citation

Nojima, S., Y. Kawamura, and K. Wakita. "Electric Field Effects in Excitonic Absorption for High-quality InGaAs/InAlAs Multiple-quantum-well Structures." Journal of Applied Physics 64 (1988): 2795. https://doi.org/10.1063/1.341582.

MLA (9th ed.) Citation

Nojima, S., et al. "Electric Field Effects in Excitonic Absorption for High-quality InGaAs/InAlAs Multiple-quantum-well Structures." Journal of Applied Physics, vol. 64, 1988, p. 2795, https://doi.org/10.1063/1.341582.