APA (7th ed.) Citation

Klein, P. B., Myers-Ward, R., & Lew, K. (2010). Recombination processes controlling the carrier lifetime in n-4H-SiC epilayers with low Z1/2 concentrations. Journal of Applied Physics, 107(8), 033713-1. https://doi.org/10.1063/1.3466745

Chicago Style (17th ed.) Citation

Klein, P. B., R. Myers-Ward, and K.-K Lew. "Recombination Processes Controlling the Carrier Lifetime in N-4H-SiC Epilayers with Low Z1/2 Concentrations." Journal of Applied Physics 107, no. 8 (2010): 033713-1. https://doi.org/10.1063/1.3466745.

MLA (9th ed.) Citation

Klein, P. B., et al. "Recombination Processes Controlling the Carrier Lifetime in N-4H-SiC Epilayers with Low Z1/2 Concentrations." Journal of Applied Physics, vol. 107, no. 8, 2010, pp. 033713-1, https://doi.org/10.1063/1.3466745.