Recombination processes controlling the carrier lifetime in n-4H-SiC epilayers with low Z1/2 concentrations.
Saved in:
| Title: | Recombination processes controlling the carrier lifetime in n-4H-SiC epilayers with low Z1/2 concentrations. |
|---|---|
| Authors: | Klein, P. B., Myers-Ward, R., Lew, K.-K. |
| Source: | Journal of Applied Physics; Aug2010, Vol. 107 Issue 8, p033713-1-033713-11, 11p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
|---|---|
| DOI: | 10.1063/1.3466745 |
