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Recombination processes controlling the carrier lifetime in n-4H-SiC epilayers with low Z1/2 concentrations.

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Bibliographic Details
Title: Recombination processes controlling the carrier lifetime in n-4H-SiC epilayers with low Z1/2 concentrations.
Authors: Klein, P. B., Myers-Ward, R., Lew, K.-K.
Source: Journal of Applied Physics; Aug2010, Vol. 107 Issue 8, p033713-1-033713-11, 11p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501647824
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.3466745
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      – Code: eng
        Text: English
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        PageCount: 11
        StartPage: 033713-1
    Titles:
      – TitleFull: Recombination processes controlling the carrier lifetime in n-4H-SiC epilayers with low Z1/2 concentrations.
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            NameFull: Klein, P. B.
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            NameFull: Myers-Ward, R.
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            NameFull: Lew, K.-K.
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            – D: 01
              M: 08
              Text: Aug2010
              Type: published
              Y: 2010
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              Value: 107
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              Value: 8
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