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Recombination processes controlling the carrier lifetime in n-4H-SiC epilayers with low Z1/2 concentrations.

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Bibliographic Details
Title: Recombination processes controlling the carrier lifetime in n-4H-SiC epilayers with low Z1/2 concentrations.
Authors: Klein, P. B., Myers-Ward, R., Lew, K.-K.
Source: Journal of Applied Physics; Aug2010, Vol. 107 Issue 8, p033713-1-033713-11, 11p
Database: Applied Science & Technology Source
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