Chen, G., Sylvester, D., & Blaauw, D. (2010). Yield-Driven Near-Threshold SRAM Design. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 18(11), 1590. https://doi.org/10.1109/TVLSI.2009.2025766
Chicago Style (17th ed.) CitationChen, Gregory, Dennis Sylvester, and David Blaauw. "Yield-Driven Near-Threshold SRAM Design." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 18, no. 11 (2010): 1590. https://doi.org/10.1109/TVLSI.2009.2025766.
MLA (9th ed.) CitationChen, Gregory, et al. "Yield-Driven Near-Threshold SRAM Design." IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 18, no. 11, 2010, p. 1590, https://doi.org/10.1109/TVLSI.2009.2025766.
Warning: These citations may not always be 100% accurate.