APA (7th ed.) Citation

Wu, Z. H., Tanikawa, T., & Murase, T. (2011). Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1101) semipolar GaN. Applied Physics Letters, 98(5), 051902-1. https://doi.org/10.1063/1.3549561

Chicago Style (17th ed.) Citation

Wu, Z. H., T. Tanikawa, and T. Murase. "Partial Strain Relaxation by Stacking Fault Generation in InGaN Multiple Quantum Wells Grown on (1101) Semipolar GaN." Applied Physics Letters 98, no. 5 (2011): 051902-1. https://doi.org/10.1063/1.3549561.

MLA (9th ed.) Citation

Wu, Z. H., et al. "Partial Strain Relaxation by Stacking Fault Generation in InGaN Multiple Quantum Wells Grown on (1101) Semipolar GaN." Applied Physics Letters, vol. 98, no. 5, 2011, pp. 051902-1, https://doi.org/10.1063/1.3549561.