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Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1101) semipolar GaN.

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Bibliographic Details
Title: Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1101) semipolar GaN.
Authors: Wu, Z. H., Tanikawa, T., Murase, T.
Source: Applied Physics Letters; January 31 2011, Vol. 98 Issue 5, p051902-1-051902-3, 3p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 501746117
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PubType: Academic Journal
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  Data: Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1101) semipolar GaN.
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  Data: <searchLink fieldCode="AU" term="%22Wu%2C+Z%2E+H%2E%22">Wu, Z. H.</searchLink><br /><searchLink fieldCode="AU" term="%22Tanikawa%2C+T%2E%22">Tanikawa, T.</searchLink><br /><searchLink fieldCode="AU" term="%22Murase%2C+T%2E%22">Murase, T.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; January 31 2011, Vol. 98 Issue 5, p051902-1-051902-3, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501746117
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      – Type: doi
        Value: 10.1063/1.3549561
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 051902-1
    Titles:
      – TitleFull: Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1101) semipolar GaN.
        Type: main
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            NameFull: Wu, Z. H.
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            NameFull: Tanikawa, T.
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            NameFull: Murase, T.
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              Text: January 31 2011
              Type: published
              Y: 2011
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              Value: 98
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