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Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1101) semipolar GaN.

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Bibliographic Details
Title: Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1101) semipolar GaN.
Authors: Wu, Z. H., Tanikawa, T., Murase, T.
Source: Applied Physics Letters; January 31 2011, Vol. 98 Issue 5, p051902-1-051902-3, 3p
Database: Applied Science & Technology Source
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