APA (7th ed.) Citation

Chaubet, C., Raymond, A., & Knap, W. (1991). Pressure dependence of the cyclotron mass in n-GaAs-GaAlAs heterojunctions by FIR emission and transport experiments. Semiconductor Science & Technology, 6, 160. https://doi.org/10.1088/0268-1242/6/3/003

Chicago Style (17th ed.) Citation

Chaubet, C., A. Raymond, and W. Knap. "Pressure Dependence of the Cyclotron Mass in N-GaAs-GaAlAs Heterojunctions by FIR Emission and Transport Experiments." Semiconductor Science & Technology 6 (1991): 160. https://doi.org/10.1088/0268-1242/6/3/003.

MLA (9th ed.) Citation

Chaubet, C., et al. "Pressure Dependence of the Cyclotron Mass in N-GaAs-GaAlAs Heterojunctions by FIR Emission and Transport Experiments." Semiconductor Science & Technology, vol. 6, 1991, p. 160, https://doi.org/10.1088/0268-1242/6/3/003.