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Pressure dependence of the cyclotron mass in n-GaAs-GaAlAs heterojunctions by FIR emission and transport experiments.

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Bibliographic Details
Title: Pressure dependence of the cyclotron mass in n-GaAs-GaAlAs heterojunctions by FIR emission and transport experiments.
Authors: Chaubet, C., Raymond, A., Knap, W.
Source: Semiconductor Science & Technology; March 1991, Vol. 6, p160-164, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501846442
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Pressure dependence of the cyclotron mass in n-GaAs-GaAlAs heterojunctions by FIR emission and transport experiments.
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  Data: <searchLink fieldCode="AU" term="%22Chaubet%2C+C%2E%22">Chaubet, C.</searchLink><br /><searchLink fieldCode="AU" term="%22Raymond%2C+A%2E%22">Raymond, A.</searchLink><br /><searchLink fieldCode="AU" term="%22Knap%2C+W%2E%22">Knap, W.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Semiconductor+Science+%26+Technology%22">Semiconductor Science & Technology</searchLink>; March 1991, Vol. 6, p160-164, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501846442
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      – Type: doi
        Value: 10.1088/0268-1242/6/3/003
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 5
        StartPage: 160
    Titles:
      – TitleFull: Pressure dependence of the cyclotron mass in n-GaAs-GaAlAs heterojunctions by FIR emission and transport experiments.
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            NameFull: Chaubet, C.
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            NameFull: Raymond, A.
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            NameFull: Knap, W.
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            – D: 01
              M: 03
              Text: March 1991
              Type: published
              Y: 1991
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              Value: 6
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            – TitleFull: Semiconductor Science & Technology
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