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Refractive index of InGaAs/InAlAs multiquantum-well layers grown by molecular-beam epitaxy.

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Bibliographic Details
Title: Refractive index of InGaAs/InAlAs multiquantum-well layers grown by molecular-beam epitaxy.
Authors: Nojima, S., Asahi, H.
Source: Journal of Applied Physics; January 15 1988, Vol. 63, p479-483, 5p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 501955732
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Refractive index of InGaAs/InAlAs multiquantum-well layers grown by molecular-beam epitaxy.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; January 15 1988, Vol. 63, p479-483, 5p
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.340267
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 5
        StartPage: 479
    Titles:
      – TitleFull: Refractive index of InGaAs/InAlAs multiquantum-well layers grown by molecular-beam epitaxy.
        Type: main
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            NameFull: Nojima, S.
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            NameFull: Asahi, H.
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            – D: 15
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              Text: January 15 1988
              Type: published
              Y: 1988
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              Value: 00218979
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              Value: 63
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            – TitleFull: Journal of Applied Physics
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