APA (7th ed.) Citation

Ferrari, C., Franzosi, P., & Gastaldi, L. (1988). Crystal quality investigation of InGaAs/InP and InGaAlAs/InP single heterostructures grown by molecular-beam epitaxy. Journal of Applied Physics, 63, 2628. https://doi.org/10.1063/1.341001

Chicago Style (17th ed.) Citation

Ferrari, C., P. Franzosi, and L. Gastaldi. "Crystal Quality Investigation of InGaAs/InP and InGaAlAs/InP Single Heterostructures Grown by Molecular-beam Epitaxy." Journal of Applied Physics 63 (1988): 2628. https://doi.org/10.1063/1.341001.

MLA (9th ed.) Citation

Ferrari, C., et al. "Crystal Quality Investigation of InGaAs/InP and InGaAlAs/InP Single Heterostructures Grown by Molecular-beam Epitaxy." Journal of Applied Physics, vol. 63, 1988, p. 2628, https://doi.org/10.1063/1.341001.