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Impurity-induced disorder in strained InGaAs/GaAs quantum wells by Zn diffusion and thermal annealing.

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Title: Impurity-induced disorder in strained InGaAs/GaAs quantum wells by Zn diffusion and thermal annealing.
Authors: Furtado, M. T., Loural, M. S. S., Sato, E. A.
Source: Semiconductor Science & Technology; June 1992, Vol. 7, p744-751, 8p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 502018803
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Impurity-induced disorder in strained InGaAs/GaAs quantum wells by Zn diffusion and thermal annealing.
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  Data: <searchLink fieldCode="JN" term="%22Semiconductor+Science+%26+Technology%22">Semiconductor Science & Technology</searchLink>; June 1992, Vol. 7, p744-751, 8p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=502018803
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1088/0268-1242/7/6/005
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 744
    Titles:
      – TitleFull: Impurity-induced disorder in strained InGaAs/GaAs quantum wells by Zn diffusion and thermal annealing.
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            NameFull: Furtado, M. T.
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            NameFull: Loural, M. S. S.
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            NameFull: Sato, E. A.
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            – D: 01
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              Text: June 1992
              Type: published
              Y: 1992
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              Value: 7
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            – TitleFull: Semiconductor Science & Technology
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