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Impurity-induced disorder in strained InGaAs/GaAs quantum wells by Zn diffusion and thermal annealing.

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Bibliographic Details
Title: Impurity-induced disorder in strained InGaAs/GaAs quantum wells by Zn diffusion and thermal annealing.
Authors: Furtado, M. T., Loural, M. S. S., Sato, E. A.
Source: Semiconductor Science & Technology; June 1992, Vol. 7, p744-751, 8p
Database: Applied Science & Technology Source
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