APA (7th ed.) Citation

Kurihara, M. (1973). Ge-doped In∞Ga1-∞As p-n junctions. Solid-State Electronics, 16, 763.

Chicago Style (17th ed.) Citation

Kurihara, M. "Ge-doped In∞Ga1-∞As P-n Junctions." Solid-State Electronics 16 (1973): 763.

MLA (9th ed.) Citation

Kurihara, M. "Ge-doped In∞Ga1-∞As P-n Junctions." Solid-State Electronics, vol. 16, 1973, p. 763.