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Ge-doped In∞Ga1-∞As p-n junctions.

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Bibliographic Details
Title: Ge-doped In∞Ga1-∞As p-n junctions.
Authors: Kurihara, M.
Source: Solid-State Electronics; July 1973, Vol. 16, p763-771, 9p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 516652150
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Ge-doped In∞Ga1-∞As p-n junctions.
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>; July 1973, Vol. 16, p763-771, 9p
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    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 9
        StartPage: 763
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      – TitleFull: Ge-doped In∞Ga1-∞As p-n junctions.
        Type: main
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            NameFull: Kurihara, M.
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          Dates:
            – D: 01
              M: 07
              Text: July 1973
              Type: published
              Y: 1973
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              Value: 00381101
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              Value: 16
          Titles:
            – TitleFull: Solid-State Electronics
              Type: main
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