APA (7th ed.) Citation

Fukushima, T., Hijikata, Y., Yaguchi, H., Yoshida, S., Okano, M., Yoshita, M., . . . Onabe, K. (2010). Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A. Physica E, 42(10), 2529. https://doi.org/10.1016/j.physe.2009.12.011

Chicago Style (17th ed.) Citation

Fukushima, T., et al. "Photoluminescence from Single Isoelectronic Traps in Nitrogen Delta-doped GaAs Grown on GaAs(111)A." Physica E 42, no. 10 (2010): 2529. https://doi.org/10.1016/j.physe.2009.12.011.

MLA (9th ed.) Citation

Fukushima, T., et al. "Photoluminescence from Single Isoelectronic Traps in Nitrogen Delta-doped GaAs Grown on GaAs(111)A." Physica E, vol. 42, no. 10, 2010, p. 2529, https://doi.org/10.1016/j.physe.2009.12.011.