Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A - Fukushima, T.; Hijikata, Y.; Yaguchi, H.; Yoshida, S.; Okano, M.; Yoshita, M.; Akiyama, H.; Kuboya, S.; Katayama, R.; Onabe, K. (Physica E, 2010)