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Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A

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Bibliographic Details
Title: Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A
Authors: Fukushima, T.1, fukushima@opt.ees.saitama-u.ac.jp, Hijikata, Y.1, Yaguchi, H.1, Yoshida, S.1, Okano, M.2, Yoshita, M.2, Akiyama, H.2, Kuboya, S.3, Katayama, R.3, Onabe, K.3
Source: Physica E; Sep2010, Vol. 42 Issue 10, p2529-2531, 3p
Database: Applied Science & Technology Source
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