APA (7th ed.) Citation

Lin, W. P., Wesolowski, D. E., & Lee, C. C. (2011). Barrier/bonding layers on bismuth telluride (BiTe) for high temperature thermoelectric modules. Journal of Materials Science: Materials in Electronics, 22(9), 1313. https://doi.org/10.1007/s10854-011-0306-0

Chicago Style (17th ed.) Citation

Lin, Wen P., Daniel E. Wesolowski, and Chin C. Lee. "Barrier/bonding Layers on Bismuth Telluride (BiTe) for High Temperature Thermoelectric Modules." Journal of Materials Science: Materials in Electronics 22, no. 9 (2011): 1313. https://doi.org/10.1007/s10854-011-0306-0.

MLA (9th ed.) Citation

Lin, Wen P., et al. "Barrier/bonding Layers on Bismuth Telluride (BiTe) for High Temperature Thermoelectric Modules." Journal of Materials Science: Materials in Electronics, vol. 22, no. 9, 2011, p. 1313, https://doi.org/10.1007/s10854-011-0306-0.