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Numerical simulation and modeling of thermal transient in silicon power devices.

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Title: Numerical simulation and modeling of thermal transient in silicon power devices.
Authors: Magnone, P.1, pmagnone@arces.unibo.it, Fiegna, C.1,2, Greco, G.3, Bazzano, G.3, Rinaudo, S.3, Sangiorgi, E.1,2
Source: Solid-State Electronics; Oct2013, Vol. 88, p69-72, 4p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 89615333
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Numerical simulation and modeling of thermal transient in silicon power devices.
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  Data: <searchLink fieldCode="AU" term="%22Magnone%2C+P%2E%22">Magnone, P.</searchLink><relatesTo>1</relatesTo>, <i>pmagnone@arces.unibo.it</i><br /><searchLink fieldCode="AU" term="%22Fiegna%2C+C%2E%22">Fiegna, C.</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Greco%2C+G%2E%22">Greco, G.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Bazzano%2C+G%2E%22">Bazzano, G.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Rinaudo%2C+S%2E%22">Rinaudo, S.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Sangiorgi%2C+E%2E%22">Sangiorgi, E.</searchLink><relatesTo>1,2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>; Oct2013, Vol. 88, p69-72, 4p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=89615333
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      – Type: doi
        Value: 10.1016/j.sse.2013.04.012
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      – Code: eng
        Text: English
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        PageCount: 4
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      – TitleFull: Numerical simulation and modeling of thermal transient in silicon power devices.
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              Text: Oct2013
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              Y: 2013
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              Value: 88
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