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Strong exciton confinement in site-controlled GaN quantum dots embedded in nanowires.

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Title: Strong exciton confinement in site-controlled GaN quantum dots embedded in nanowires.
Authors: Choi, Kihyun1, Kako, Satoshi2, Holmes, Mark J.1, Arita, Munetaka1, Arakawa, Yasuhiko1,2
Source: Applied Physics Letters; 10/21/2013, Vol. 103 Issue 17, p171907, 4p, 1 Diagram, 3 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 91660092
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 10/21/2013, Vol. 103 Issue 17, p171907, 4p, 1 Diagram, 3 Graphs
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=91660092
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      – Type: doi
        Value: 10.1063/1.4826931
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 171907
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      – TitleFull: Strong exciton confinement in site-controlled GaN quantum dots embedded in nanowires.
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            NameFull: Choi, Kihyun
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            NameFull: Kako, Satoshi
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            NameFull: Holmes, Mark J.
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            NameFull: Arita, Munetaka
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              Text: 10/21/2013
              Type: published
              Y: 2013
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              Value: 103
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              Value: 17
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