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Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors.

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Title: Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors.
Authors: Carrion, Enrique A.1, Serov, Andrey Y.1, Islam, Sharnali1, Behnam, Ashkan1, Malik, Akshay1, Xiong, Feng1, Bianchi, Massimiliano2, Sordan, Roman2, Pop, Eric3
Source: IEEE Transactions on Electron Devices; May2014, Vol. 61 Issue 5, p1583-1589, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 95697110
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Electron+Devices%22">IEEE Transactions on Electron Devices</searchLink>; May2014, Vol. 61 Issue 5, p1583-1589, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=95697110
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      – Type: doi
        Value: 10.1109/TED.2014.2309651
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      – Code: eng
        Text: English
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        PageCount: 7
        StartPage: 1583
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      – TitleFull: Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors.
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            NameFull: Serov, Andrey Y.
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            NameFull: Islam, Sharnali
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            NameFull: Behnam, Ashkan
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              Text: May2014
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            – TitleFull: IEEE Transactions on Electron Devices
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