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GaSb: A New Alternative Substrate for Epitaxial Growth of HgCdTe.

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Title: GaSb: A New Alternative Substrate for Epitaxial Growth of HgCdTe.
Authors: Lei, W.1, wen.lei@uwa.edu.au, Gu, R.1, Antoszewski, J.1, Dell, J.1, Faraone, L.1
Source: Journal of Electronic Materials; Aug2014, Vol. 43 Issue 8, p2788-2794, 7p, 2 Color Photographs, 2 Charts, 4 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 96956113
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: GaSb: A New Alternative Substrate for Epitaxial Growth of HgCdTe.
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  Data: <searchLink fieldCode="AU" term="%22Lei%2C+W%2E%22">Lei, W.</searchLink><relatesTo>1</relatesTo>, <i>wen.lei@uwa.edu.au</i><br /><searchLink fieldCode="AU" term="%22Gu%2C+R%2E%22">Gu, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Antoszewski%2C+J%2E%22">Antoszewski, J.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Dell%2C+J%2E%22">Dell, J.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Faraone%2C+L%2E%22">Faraone, L.</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; Aug2014, Vol. 43 Issue 8, p2788-2794, 7p, 2 Color Photographs, 2 Charts, 4 Graphs
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=96956113
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        Value: 10.1007/s11664-014-3049-x
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      – Code: eng
        Text: English
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        StartPage: 2788
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      – TitleFull: GaSb: A New Alternative Substrate for Epitaxial Growth of HgCdTe.
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            NameFull: Lei, W.
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              Text: Aug2014
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