APA (7th ed.) Citation

Stoemenos, J., Margail, J., Jaussaud, C., Dupuy, M., & Bruel, M. (1986). SiO2 buried layer formation by subcritical dose oxygen ion implantation. Applied Physics Letters, 48(21), 1470. https://doi.org/10.1063/1.96892

Chicago Style (17th ed.) Citation

Stoemenos, J., J. Margail, C. Jaussaud, M. Dupuy, and M. Bruel. "SiO2 Buried Layer Formation by Subcritical Dose Oxygen Ion Implantation." Applied Physics Letters 48, no. 21 (1986): 1470. https://doi.org/10.1063/1.96892.

MLA (9th ed.) Citation

Stoemenos, J., et al. "SiO2 Buried Layer Formation by Subcritical Dose Oxygen Ion Implantation." Applied Physics Letters, vol. 48, no. 21, 1986, p. 1470, https://doi.org/10.1063/1.96892.