SiO2 buried layer formation by subcritical dose oxygen ion implantation.
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| Title: | SiO2 buried layer formation by subcritical dose oxygen ion implantation. |
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| Authors: | Stoemenos, J., Margail, J., Jaussaud, C., Dupuy, M., Bruel, M. |
| Source: | Applied Physics Letters; 5/26/1986, Vol. 48 Issue 21, p1470, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/1.96892 |
