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SiO2 buried layer formation by subcritical dose oxygen ion implantation.

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Bibliographic Details
Title: SiO2 buried layer formation by subcritical dose oxygen ion implantation.
Authors: Stoemenos, J., Margail, J., Jaussaud, C., Dupuy, M., Bruel, M.
Source: Applied Physics Letters; 5/26/1986, Vol. 48 Issue 21, p1470, 3p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 9819930
AccessLevel: 2
PubType: Academic Journal
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  Data: <searchLink fieldCode="AU" term="%22Stoemenos%2C+J%2E%22">Stoemenos, J.</searchLink><br /><searchLink fieldCode="AU" term="%22Margail%2C+J%2E%22">Margail, J.</searchLink><br /><searchLink fieldCode="AU" term="%22Jaussaud%2C+C%2E%22">Jaussaud, C.</searchLink><br /><searchLink fieldCode="AU" term="%22Dupuy%2C+M%2E%22">Dupuy, M.</searchLink><br /><searchLink fieldCode="AU" term="%22Bruel%2C+M%2E%22">Bruel, M.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 5/26/1986, Vol. 48 Issue 21, p1470, 3p
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        Value: 10.1063/1.96892
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 1470
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      – TitleFull: SiO2 buried layer formation by subcritical dose oxygen ion implantation.
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            NameFull: Stoemenos, J.
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            NameFull: Margail, J.
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            NameFull: Jaussaud, C.
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            NameFull: Dupuy, M.
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              Text: 5/26/1986
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              Y: 1986
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