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SiO2 buried layer formation by subcritical dose oxygen ion implantation.

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Bibliographic Details
Title: SiO2 buried layer formation by subcritical dose oxygen ion implantation.
Authors: Stoemenos, J., Margail, J., Jaussaud, C., Dupuy, M., Bruel, M.
Source: Applied Physics Letters; 5/26/1986, Vol. 48 Issue 21, p1470, 3p
Database: Applied Science & Technology Source
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