Band gap and electronic structure of MgSiN2.
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| Title: | Band gap and electronic structure of MgSiN2. |
|---|---|
| Authors: | Quirk, J. B.1, james.quirk09@imperial.ac.uk, Råsander, M.1, McGilvery, C. M.1, Palgrave, R.2, Moram, M. A.1 |
| Source: | Applied Physics Letters; 9/15/2014, Vol. 105 Issue 11, p1-4, 4p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 98485065 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=98485065 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1063/1.4896134 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 1 Titles: – TitleFull: Band gap and electronic structure of MgSiN2. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Quirk, J. B. – PersonEntity: Name: NameFull: Råsander, M. – PersonEntity: Name: NameFull: McGilvery, C. M. – PersonEntity: Name: NameFull: Palgrave, R. – PersonEntity: Name: NameFull: Moram, M. A. IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 09 Text: 9/15/2014 Type: published Y: 2014 Identifiers: – Type: issn-print Value: 00036951 Numbering: – Type: volume Value: 105 – Type: issue Value: 11 Titles: – TitleFull: Applied Physics Letters Type: main |
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