Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage.
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| Title: | Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage. |
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| Authors: | Doering, S.1,2, stefan.doering@infineon.com, Rudolf, R.1, Pinkert, M.1, Roetz, H.1, Wagner, C.1, Eckl, S.1, Strasser, M.3, Wachowiak, A.2, Mikolajick, T.2,4 |
| Source: | Microelectronics Reliability; Sep2014, Vol. 54 Issue 9/10, p2128-2132, 5p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00262714 |
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| DOI: | 10.1016/j.microrel.2014.07.021 |
