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Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage.

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Bibliographic Details
Title: Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage.
Authors: Doering, S.1,2, stefan.doering@infineon.com, Rudolf, R.1, Pinkert, M.1, Roetz, H.1, Wagner, C.1, Eckl, S.1, Strasser, M.3, Wachowiak, A.2, Mikolajick, T.2,4
Source: Microelectronics Reliability; Sep2014, Vol. 54 Issue 9/10, p2128-2132, 5p
Database: Applied Science & Technology Source
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