Thermodynamic Simulation of Polycrystalline Silicon Chemical Vapor Deposition in Si–Cl–H System.
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| Title: | Thermodynamic Simulation of Polycrystalline Silicon Chemical Vapor Deposition in Si–Cl–H System. |
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| Authors: | Yangmin Zhou1,2,3 (AUTHOR), Hou, Yanqing1 (AUTHOR) hhouyanqing@163.com, Nie, Zhifeng1,2 (AUTHOR), Xie, Gang1,3 (AUTHOR), Ma, Wenhui1,2 (AUTHOR), Dai, Yongnian1,2 (AUTHOR), Ramachandran, Palghat A.4 (AUTHOR) |
| Source: | Theoretical Foundations of Chemical Engineering. Nov2019, Vol. 53 Issue 6, p1048-1056. 9p. 1 Diagram, 2 Charts, 6 Graphs. |
| Database: | Academic Search Ultimate |
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| Header | DbId: asn DbLabel: Academic Search Ultimate An: 140372374 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=140372374 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1134/S0040579519060162 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 9 StartPage: 1048 Titles: – TitleFull: Thermodynamic Simulation of Polycrystalline Silicon Chemical Vapor Deposition in Si–Cl–H System. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Yangmin Zhou – PersonEntity: Name: NameFull: Hou, Yanqing – PersonEntity: Name: NameFull: Nie, Zhifeng – PersonEntity: Name: NameFull: Xie, Gang – PersonEntity: Name: NameFull: Ma, Wenhui – PersonEntity: Name: NameFull: Dai, Yongnian – PersonEntity: Name: NameFull: Ramachandran, Palghat A. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 11 Text: Nov2019 Type: published Y: 2019 Identifiers: – Type: issn-print Value: 00405795 Numbering: – Type: volume Value: 53 – Type: issue Value: 6 Titles: – TitleFull: Theoretical Foundations of Chemical Engineering Type: main |
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