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Comparative simulation of DC and AC performances of Al0.26Ga0.74N/GaN HEMT with BGaN Back Barrier.

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Title: Comparative simulation of DC and AC performances of Al0.26Ga0.74N/GaN HEMT with BGaN Back Barrier.
Authors: Four, Imane1 imane.four@univ-tlemcen.dz, Kameche, Mohammed2
Source: International Journal of Nanoelectronics & Materials. Jan2021, Vol. 14 Issue 1, p99-112. 14p.
Database: Academic Search Ultimate
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  Data: Comparative simulation of DC and AC performances of Al<subscript>0.26</subscript>Ga<subscript>0.74</subscript>N/GaN HEMT with BGaN Back Barrier.
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  Data: <searchLink fieldCode="JN" term="%22International+Journal+of+Nanoelectronics+%26+Materials%22">International Journal of Nanoelectronics & Materials</searchLink>. Jan2021, Vol. 14 Issue 1, p99-112. 14p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=151843284
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      – Code: eng
        Text: English
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        PageCount: 14
        StartPage: 99
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      – TitleFull: Comparative simulation of DC and AC performances of Al0.26Ga0.74N/GaN HEMT with BGaN Back Barrier.
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              Text: Jan2021
              Type: published
              Y: 2021
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