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Cation composition ratio and channel length effects on bias stress instability in amorphous InGaZnO back-end-of-line field-effect transistors.

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Title: Cation composition ratio and channel length effects on bias stress instability in amorphous InGaZnO back-end-of-line field-effect transistors.
Authors: Kim, Donguk1 (AUTHOR), Lee, Dayeon1 (AUTHOR), Kim, Wonjung1 (AUTHOR), Lee, Ho Jung1 (AUTHOR), Kim, Changwook1 (AUTHOR), Lee, Kwang-Hee2 (AUTHOR), Jung, Moonil2 (AUTHOR), Yang, Jee-Eun2 (AUTHOR), Jang, Younjin2 (AUTHOR), Kim, Sungjun3 (AUTHOR) sungjun@dongguk.edu, Kim, Sangwook2 (AUTHOR) nofate.kim@samsung.com, Kim, Dae Hwan1 (AUTHOR) drlife@kookmin.ac.kr
Source: Scientific Reports. 12/28/2024, Vol. 14 Issue 1, p1-11. 11p.
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