陈尚举, 李海侠, 区力函, & 陈林. (2026). 基于第一性原理Sn掺杂的MoS2气敏性研究. Journal of Atomic & Molecular Physics (1000-0364), 43(3), 031003-1. https://doi.org/10.19855/j.1000-0364.2026.031003
Chicago Style (17th ed.) Citation陈尚举, 李海侠, 区力函, and 陈林. "基于第一性原理Sn掺杂的MoS2气敏性研究." Journal of Atomic & Molecular Physics (1000-0364) 43, no. 3 (2026): 031003-1. https://doi.org/10.19855/j.1000-0364.2026.031003.
MLA (9th ed.) Citation陈尚举, et al. "基于第一性原理Sn掺杂的MoS2气敏性研究." Journal of Atomic & Molecular Physics (1000-0364), vol. 43, no. 3, 2026, pp. 031003-1, https://doi.org/10.19855/j.1000-0364.2026.031003.
Warning: These citations may not always be 100% accurate.
